Crystal Growth and Wafer Preparation

 

Description: Crystal growth, types of defect, and basic wafer preparation processes.

Length of time: 2 hrs.

Prerequisites:

Module: Crystal Structure

Module: Semiconductor Processing Measurement

Topics:

1. Crystal growing

Purpose

Methods

Defects

2. Wafer preparation

Processes

Tests

3. Epitaxial growth

Silicon layer deposition

 

Student objectives:

Student will be able to:

1. Explain what is meant by (and give the reason for) "crystal growing" in semiconductor manufacturing.

2. Describe some methods used to grow crystals. Put major emphasis on the Czochralski (CZ) method including a description of the affiliated materials and equipment.

3. List some defects that can occur in crystals. Discuss causes and prevention.

4. Sketch a process flow to show major steps in wafer preparation from removal of grown crystal ingot to wafer packaging. Indicate equipment, tests, and measurements throughout.

5. Explain how orientation and resistivity are tested before a crystal is submitted to actual wafering steps.

6. Discuss the formation and nature of an epitaxial film when silicon atoms are deposited on a bare, clean silicon wafer.